Andreev Reflection in the Quantum Hall Regime at an Al/InAs Junction on a Cleaved Edge

被引：0

作者：

Akiho, Takafumi ^{[1
]}

Irie, Hiroshi ^{[1
]}

Nakazawa, Yusuke ^{[1
]}

Sasaki, Satoshi ^{[1
]}

Kumada, Norio ^{[1
]}

Muraki, Koji ^{[1
]}

机构：

[1] NTT Basic Res Labs, Atsugi 2430198, Japan

来源：

NANO LETTERS | 2024年 / 24卷 / 46期

关键词：

Quantum Hall effect; Superconductivity; Andreevreflection; Cleaved edge overgrowth; CONDUCTIVITY; TRANSITION;

D O I：

10.1021/acs.nanolett.4c04223

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

We have fabricated a superconductor/semiconductor junction composed of Al and InAs using cleaved edge overgrowth. By exploiting the unique geometry with a thin Al/Pt/Al trilayer formed on the side surface of an in situ cleaved InAs quantum well heterostructure wafer, we achieve a superconducting critical field of similar to 5 T, allowing superconductivity and quantum Hall (QH) effects to coexist down to filling factor nu = 3. Andreev reflection at zero magnetic field shows a conductance enhancement limited solely by the Fermi velocity mismatch, demonstrating a virtually barrier-free junction. Bias spectroscopy in the QH regime reveals the opening of a superconducting gap, with the reduced downstream resistance indicating electron-hole Andreev conversion. Our results, obtained in a new experimental regime characterized by a clean edge-contacted junction with a superconducting electrode narrower than the coherence length, open new avenues for both theoretical and experimental studies of the interplay between superconductivity and QH effects.

引用

页码：14790 / 14796

页数：7

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