Layout Inductance Assisted Novel Turn-ON Switching Loss Recovery Technique for SiC MOSFETs

被引：0
|
作者：
Miryala, Vamshi Krishna [1 ]
Pandey, Vibhav [2 ]
Hatua, Kamalesh [2 ]
Bhattacharya, Subhashish [3 ]
机构：
[1] The Department of Electrical Sciences, Indian Institute of Technology Madras, Chennai,600036, India
[2] The Department of Electrical Engineering, Indian Institute of Technology Madras, Chennai,600036, India
[3] The ECE, North Carolina State University, Raleigh,NC,27695, United States
来源：
IEEE Journal of Emerging and Selected Topics in Industrial Electronics | 2021年 / 2卷 / 04期
关键词：
23;
D O I：
10.1109/JESTIE.2021.3105871
中图分类号：
学科分类号：
摘要：
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页码：513 / 525
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