Highly Reproducible Heterosynaptic Plasticity Enabled by MoS2/ZrO2- xHeterostructure Memtransistor

被引：0
|
作者：
Jang, Hye Yeon [1 ,2 ]
Kwon, Ojun [1 ,2 ]
Nam, Jae Hyeon [1 ,2 ]
Kwon, Jung-Dae [3 ]
Kim, Yonghun [3 ]
Park, Woojin [1 ,2 ]
Cho, Byungjin [1 ,2 ]
机构：
[1] Department of Advanced Material Engineering, Chungbuk National University, Chungdae-ro 1, Seowon-Gu Chungbuk, Cheongju,28644, Korea, Republic of
[2] Department of Urban, Energy, and Environmental Engineering, Chungbuk National University, Chungdae-ro 1, Seowon-Gu Chungbuk, Cheongju,28644, Korea, Republic of
[3] Department of Energy and Electronic Materials, Surface Materials Division, Korea Institute of Materials Science, 797 Changwondaero, Sungsan-gu Gyeongnam, Changwon,51508, Korea, Republic of
来源：
ACS Applied Materials and Interfaces | 2022年 / 14卷 / 46期
关键词：
This work was supported by a National Research Foundation of Korea (NRF) grant funded by the Korean Government (MSIT; Ministry of Science and ICT) (No. 2020R1A2C4001739); Chungbuk National University BK21 program (2021) and Basic Science Research Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Education (2021R1I1A1A01041475); and Fundamental Research Program (PNK8340) of the Korea Institute of Materials Science (KIMS);
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页码：52173 / 52181
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