Modeling the Thermal Characteristics of Stacked 2T0C Memory Array Based on InGaZnO4 Thin-film Transistors

被引：0
|
作者：
He, Song [1 ]
Li, Haoxin [1 ]
Xu, Guangwei [1 ]
Tang, Xinyi [1 ]
Li, Yuanbiao [1 ]
Kim, Jaewoo [2 ]
Gu, Tingting [2 ]
Xue, Xingkun [2 ]
Li, Zelun [2 ]
Xu, Handong [2 ]
Dong, Haiyang [2 ]
Zhou, Kai [1 ]
Hu, Xianqin [1 ,2 ]
Long, Shibing [1 ]
机构：
[1] University of Science and Technology of China, School of Microelectronics, Hefei,230026, China
[2] Changxin Memory Technologies, Inc., Hefei,230601, China
来源：
International Conference on Simulation of Semiconductor Processes and Devices, SISPAD | 2023年
关键词：
Compilation and indexing terms; Copyright 2024 Elsevier Inc;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
Dynamic random access storage - Electron transport properties - Electronic design automation - Gallium compounds - Memory architecture - Semiconducting indium compounds - Thin film circuits - Thin films - Zinc compounds
引用
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页码：17 / 20
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