Self-Assembled Monolayer Hole Transport Layers for High-Performance and Stable Inverted Perovskite Solar Cells

TiO2-based colossal dielectric ceramics have emerged as a prominent research focus in recent years. However, their further applications have been constrained by several key limitations, including the requirement of high sintering temperature (>1400 degrees C), relatively high dielectric loss (>0.05, 1 kHz), and temperature stability (<200 degrees C). This study reports rutile (In0.5Ta0.5)(0.1)Ti0.87O1.88F0.12 ceramics at 1220 degrees C sintering using 12 % InF3 as the acceptor In3+ source, which exhibits a colossal dielectric constant (1.1 x 10(5)) and an ultra-low dielectric loss (0.0071) at 1 kHz and room temperature, even loss values below 0.04 (20 Hz - 100 kHz). Notably, the thermal stabilities (10 kHz, 100 kHz) simultaneously satisfy X9E (Delta epsilon(r)/epsilon(25) (degrees C) <= +/- 4.7 %) above 300 degrees C. F<bold>-</bold> not only supplies electrons to enhance the semiconductivity of grains, but also decreases the oxygen vacancy and average grain size (270 +/- 12.53 nm) to improve grain boundaries resistances, which reduces dielectric loss and enhances frequency and temperature stabilities. As a result, the dielectric mechanism is mainly related to internal barrier layer capacitor (IBLC) and high grain boundary resistance. Therefore, this strategy provides a creative design for developing TiO2-based ceramics.