Physics-Informed Compact Model for SF6/O2 Plasma Etching

被引:0
|
作者
Filipovic, Lado [1 ,2 ]
Bobinac, Josip [2 ]
Piso, Julius [2 ]
Reiter, Tobias [1 ,2 ]
机构
[1] Cdl for Multi-Scale Process Modeling of Semiconductor Devices and Sensors, Austria
[2] Tu Wien, Institute for Microelectronics, Vienna,1040, Austria
来源
International Conference on Simulation of Semiconductor Processes and Devices, SISPAD | 2023年
关键词
Compendex;
D O I
暂无
中图分类号
学科分类号
摘要
Sulfur hexafluoride
引用
收藏
页码:73 / 76
相关论文
共 50 条
  • [21] Fabrication of SiC nanopillars by inductively coupled SF6/O2 plasma etching
    Choi, J. H.
    Latu-Romain, L.
    Bano, E.
    Dhalluin, F.
    Chevolleau, T.
    Baron, T.
    JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2012, 45 (23)
  • [22] Inverse RIE Lag during Silicon Etching in SF6 + O2 Plasma
    Knizikevicius, R.
    ACTA PHYSICA POLONICA A, 2020, 137 (03) : 313 - 316
  • [23] Temperature influence on etching deep holes with SF6/O2 cryogenic plasma
    Craciun, G
    Blauw, MA
    van der Drift, E
    Sarro, PM
    French, PJ
    JOURNAL OF MICROMECHANICS AND MICROENGINEERING, 2002, 12 (04) : 390 - 394
  • [24] Precision plasma etching of Si, Ge, and Ge: P by SF6 with added O2
    Wongwanitwattana, Chalermwat
    Shah, Vishal A.
    Myronov, Maksym
    Parker, Evan H. C.
    Whall, Terry
    Leadley, David R.
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 2014, 32 (03):
  • [25] High-temperature etching of SiC in SF6/O2 inductively coupled plasma
    Osipov, Artem A.
    Iankevich, Gleb A.
    Speshilova, Anastasia B.
    Osipov, Armenak A.
    Endiiarova, Ekaterina, V
    Berezenko, Vladimir, I
    Tyurikova, Irina A.
    Tyurikov, Kirill S.
    Alexandrov, Sergey E.
    SCIENTIFIC REPORTS, 2020, 10 (01)
  • [26] Etching of high aspect ratio structures in Si using SF6/O2 plasma
    Gomez, S
    Belen, RJ
    Kiehlbauch, M
    Aydil, ES
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 2004, 22 (03): : 606 - 615
  • [27] Cyclic, cryogenic, highly anisotropic plasma etching of silicon using SF6/O2
    Isakovic, A. F.
    Evans-Lutterodt, K.
    Elliott, D.
    Stein, A.
    Warren, J. B.
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 2008, 26 (05): : 1182 - 1187
  • [28] Simulation of cryogenic silicon etching under SF6/O2/Ar plasma discharge
    Haidar, Yehya
    Rhallabi, Ahmed
    Pateau, Amand
    Mokrani, Arezki
    Taher, Fadia
    Roqueta, Fabrice
    Boufnichel, Mohamed
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 2016, 34 (06):
  • [29] High-temperature etching of SiC in SF6/O2 inductively coupled plasma
    Artem A. Osipov
    Gleb A. Iankevich
    Anastasia B. Speshilova
    Armenak A. Osipov
    Ekaterina V. Endiiarova
    Vladimir I. Berezenko
    Irina A. Tyurikova
    Kirill S. Tyurikov
    Sergey E. Alexandrov
    Scientific Reports, 10
  • [30] Impact of Ar addition to inductively coupled plasma etching of SiC in SF6/O2
    Jiang, LD
    Cheung, R
    MICROELECTRONIC ENGINEERING, 2004, 73-4 : 306 - 311