Floquet second-order topological Anderson insulator hosting corner localized modes

被引:4
|
作者
Ghosh, Arnob Kumar [1 ,2 ,3 ]
Nag, Tanay [4 ]
Saha, Arijit [1 ,2 ]
机构
[1] Inst Phys, Sachivalaya Marg, Bhubaneswer 751005, India
[2] Homi Bhabha Natl Inst, Training Sch Complex, Mumbai 400094, India
[3] Uppsala Univ, Dept Phys & Astron, Box 516, S-75120 Uppsala, Sweden
[4] BITS Pilani, Dept Phys, Hyderabad Campus, Hyderabad 500078, Telangana, India
关键词
HIGHER-ORDER TOPOLOGY;
D O I
10.1103/PhysRevB.110.125427
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The presence of random disorder in a metallic system accounts for the localization of extended states in general. On the contrary, the presence of disorder can induce topological phases hosting metallic boundary states out of a nontopological system, giving birth to the topological Anderson insulator phase. In this context, we theoretically investigate the generation of an out of equilibrium higher-order topological Anderson phase in the presence of disorder potential in a time-periodic dynamical background. In particular, the time-dependent drive and the disorder potential concomitantly render the generation of Floquet higher-order topological Anderson insulator (FHOTAI) phase, while the clean, undriven system is topologically trivial. We showcase the generation of FHOTAI hosting both 0 and pi modes. Most importantly, we develop the real space topological invariant: a winding number based on chiral symmetry to characterize the Floquet 0 and 7r modes distinctly. This chiral winding number serves the purpose of the indicator for the topological phase transition in the presence of drive as well as disorder and appropriately characterizes the FHOTAI.
引用
收藏
页数:11
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