Interference effects in commercially available free-space silicon single-photon avalanche diodes

被引:1
|
作者
Arabskyj, L. [1 ]
Dejen, B. [1 ]
Santana, T. S. [1 ]
Lucamarini, M. [2 ,3 ]
Chunnilall, C. J. [1 ]
Dolan, P. R. [1 ]
机构
[1] Natl Phys Lab, Hampton Rd, Teddington TW11 0LW, England
[2] Univ York, Inst Safe Auton, Sch Phys Engn & Technol, York YO10 5FT, England
[3] Univ York, Inst Safe Auton, York Ctr Quantum Technol, York YO10 5FT, England
关键词
QUANTUM KEY DISTRIBUTION; DETECTION EFFICIENCY; TIME;
D O I
10.1063/5.0225337
中图分类号
O59 [应用物理学];
学科分类号
摘要
Single-photon avalanche diodes (SPADs) are essential for photon-based measurements and metrology, enabling measurement comparisons at the few-photon level and facilitating global traceability to the SI. A spatially uniform detector response is crucial for these applications. Here, we report on interference effects in commercially available silicon SPADs that are detrimental to their spatial uniformity. Contrasts as high as 18% are observed, posing problems for metrology and general applications that utilize coherent light and require stable detection efficiencies. We eliminate the device optical window as a contributing interface, isolating likely causes to anti-reflective coatings, the semiconductor surface, and the SPAD's internal structure. We also present results where we leverage this sub-optimal behavior by aligning an incident beam with the position of maximum constructive interference, yielding an effective detection efficiency of 51.1(1.7)% compared to the normal value of 44.3(1)% obtained with the interference suppressed. We anticipate that this work will significantly impact the continuing development of these devices, the methods for characterizing them, and their use in accurate measurements.
引用
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页数:7
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