Architectural design and cryogenic synthesis of Si3N4@(TiN–Si3N4) for high conductivity

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[1] [1,Yang, Mei
[2] Lv, Mingli
[3] Wang, Qi
[4] 1,Zhu, Hongmin
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Zhu, Hongmin (hzhu@material.tohoku.ac.jp) | 1600年 / Blackwell Publishing Inc., Postfach 10 11 61, 69451 Weinheim, Boschstrabe 12, 69469 Weinheim, Deutschland, 69469, Germany卷 / 101期
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摘要：
Titanium nitride
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