Origin of multiple peak photoluminescence in InGaN/GaN multiple quantum wells

被引:0
|
作者
机构
[1] Pozina, G.
[2] Bergman, J.P.
[3] Monemar, B.
[4] Takeuchi, T.
[5] Amano, H.
[6] Akasaki, I.
来源
| 1600年 / American Institute of Physics Inc.卷 / 88期
关键词
D O I
暂无
中图分类号
学科分类号
摘要
引用
收藏
相关论文
共 50 条
  • [21] Photoluminescence of InGaN/GaN multiple quantum wells originating from complete phase separation
    Chen, P.
    Chua, S.J.
    Miao, Z.L.
    Journal of Applied Physics, 2003, 93 (05): : 2507 - 2509
  • [22] Photoluminescence of Multiple GaN/AlN Quantum Wells
    Aleksandrov, I. A.
    Malin, T., V
    Protasov, D. Yu
    Pecz, B.
    Zhuravlev, K. S.
    OPTOELECTRONICS INSTRUMENTATION AND DATA PROCESSING, 2021, 57 (05) : 526 - 531
  • [23] Photoluminescence of Multiple GaN/AlN Quantum Wells
    I. A. Aleksandrov
    T. V. Malin
    D. Yu. Protasov
    B. Pecz
    K. S. Zhuravlev
    Optoelectronics, Instrumentation and Data Processing, 2021, 57 : 526 - 531
  • [24] Characteristics of nanoporous InGaN/GaN multiple quantum wells
    Wang, W. J.
    Yang, G. F.
    Chen, P.
    Yu, Z. G.
    Liu, B.
    Xie, Z. L.
    Xiu, X. Q.
    Wu, Z. L.
    Xu, F.
    Xu, Z.
    Hua, X. M.
    Zhao, H.
    Han, P.
    Shi, Y.
    Zhang, R.
    Zheng, Y. D.
    SUPERLATTICES AND MICROSTRUCTURES, 2014, 71 : 38 - 45
  • [25] Intersubband Transition in GaN/InGaN Multiple Quantum Wells
    Chen, G.
    Wang, X. Q.
    Rong, X.
    Wang, P.
    Xu, F. J.
    Tang, N.
    Qin, Z. X.
    Chen, Y. H.
    Shen, B.
    SCIENTIFIC REPORTS, 2015, 5
  • [26] Microstructure studies of InGaN/GaN multiple quantum wells
    Lin, YS
    Hsu, C
    Ma, KJ
    Feng, SW
    Cheng, YC
    Chung, YY
    Liu, CW
    Yang, CC
    Chyi, JI
    CLEO(R)/PACIFIC RIM 2001, VOL II, TECHNICAL DIGEST, 2001, : 218 - 219
  • [27] Radiative recombination in InGaN/GaN multiple quantum wells
    Bergman, JP
    Monemar, B
    Pozina, G
    Sernelius, BE
    Holtz, PO
    Amano, H
    Akasaki, I
    SILICON CARBIDE AND RELATED MATERIALS - 1999 PTS, 1 & 2, 2000, 338-3 : 1571 - 1574
  • [28] Effect of annealing on InGaN/GaN multiple quantum wells
    Kim, TS
    Park, JY
    Cuong, TV
    Kim, HG
    Lee, HJ
    Suh, EK
    Hong, CH
    JOURNAL OF THE KOREAN PHYSICAL SOCIETY, 2005, 47 (05) : 871 - 875
  • [29] Intersubband Transition in GaN/InGaN Multiple Quantum Wells
    G. Chen
    X. Q. Wang
    X. Rong
    P. Wang
    F. J. Xu
    N. Tang
    Z. X. Qin
    Y. H. Chen
    B. Shen
    Scientific Reports, 5
  • [30] Optical investigation of InGaN GaN multiple quantum wells
    Wang, T
    Nakagawa, D
    Lachab, M
    Sugahara, T
    Sakai, S
    APPLIED PHYSICS LETTERS, 1999, 74 (21) : 3128 - 3130