Design of CPW-fed high rejection triple band-notch UWB antenna on silicon with diverse wireless applications

被引：0
|
作者：
Sharma M. [1 ]
Awasthi Y.K. [2 ]
Singh H. [3 ]
机构：
[1] Department of Electronics & Communication Engineering, Aravali College of Engineering & Management, Faridabad
[2] Antenna Fabrication & Measurement Laboratory, Electronics & Communication Engineering, Manav Rachna University, Faridabad
[3] Department of Electronics, Sri Aurobindo College, University of Delhi, New Delhi
来源：
Progress In Electromagnetics Research C | 2017年 / 74卷
关键词：
D O I：
10.2528/PIERC16092101
中图分类号：
学科分类号：
摘要：
In this paper, a CPW-fed circular patch UWB-extended bandwidth antenna is proposed which is fabricated and characterized on silicon. The proposed antenna covers fractional bandwidth of 132.08% with high rejection triple band-notch characteristics [WiMAX(3.30 GHz– 3.80 GHz)/WLAN(IEEE802.11a/h/j/n 5.15 GHz–5.35 GHz, 5.25 GHz–5.35 GHz, 5.47 GHz–5.725 GHz, 5.725 GHz–5.825 GHz)/X-band downlink satellite communication system (7.25 GHz–7.75 GHz)]. Gain and efficiency of the proposed antenna in the entire bandwidth vary between 3.96 dBi–10.98 dBi and 84%–95%, respectively. Also, group delay in the entire operating band is ≤ 1.0 ns. Furthermore, the proposed antenna exhibits good dipole like radiation pattern in E-plane and omnidirectional pattern in H-plane with small dimension of 20 × 20 × 0.5 mm3. © 2017, Electromagnetics Academy. All rights reserved.
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页码：19 / 30
页数：11
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