Direct comparison of ZrO2 and HfO2 on Ge substrate in terms of the realization of ultrathin high-κ gate stacks

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[1] Kamata, Yoshiki
[2] Kamimuta, Yuuichi
[3] Ino, Tsunehiro
[4] Nishiyama, Akira
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Kamata, Y. (yoshiki.kamata@toshiba.co.jp) | 1600年 / Japan Society of Applied Physics卷 / 44期
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Gates; (transistor);
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