New symbolically defined model for InP heterojunction bipolar transistors

被引：0
|
作者：
机构：
[1] Qi, Yuhua
[2] Shen, Zhao
[3] He, Rulong
来源：
| 2018年 / Horizon House卷 / 61期
关键词：
Compendex;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
引用
收藏
相关论文
共 50 条
  • [21] Surface recombination in InP/InAlAs/GaAsSb/InP double heterojunction bipolar transistors
    Ng, Chai Wah
    Wang, Hong
    Radhakrishnan, K.
    2007 INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS, CONFERENCE PROCEEDINGS, 2007, : 151 - 153
  • [22] InP/InGaAs heterojunction bipolar transistors with superlattice emitter structure
    Wang, WC
    Lin, KP
    Yu, KH
    Lin, KW
    Yen, CH
    Chiou, WH
    Wang, CK
    Liu, WC
    COMMAD 2000 PROCEEDINGS, 2000, : 234 - 237
  • [23] HETEROJUNCTION INP/GAINAS PHOTOTRANSISTORS/BIPOLAR TRANSISTORS GROWN BY MOVPE
    CHANDRASEKHAR, S
    CAMPBELL, JC
    DENTAI, AG
    JOYNER, CH
    QUA, GJ
    SUGIURA, O
    ELECTRONICS LETTERS, 1988, 24 (06) : 319 - 320
  • [24] InP double heterojunction bipolar transistors for terahertz computed tomography
    Coquillat, Dominique
    Duhant, Alexandre
    Triki, Meriam
    Nodjiadjim, Virginie
    Konczykowska, Agnieszka
    Riet, Muriel
    Dyakonova, Nina
    Strauss, Olivier
    Knap, Wojciech
    AIP ADVANCES, 2018, 8 (08):
  • [25] Analytical modeling of pnp InP/InGaAs heterojunction bipolar transistors
    Datta, S
    Roenker, KP
    Cahay, MM
    Lunardi, LM
    SOLID-STATE ELECTRONICS, 2000, 44 (07) : 1331 - 1333
  • [26] High speed InP-based heterojunction bipolar transistors
    Rodwell, M
    Urteaga, M
    Lee, S
    Scott, D
    Kim, YM
    Dahlstrom, M
    Wei, Y
    Mathew, T
    Long, S
    Gossard, A
    COMPOUND SEMICONDUCTORS 2001, 2002, (170): : 21 - 26
  • [27] Improved InP-based double heterojunction bipolar transistors
    Lin, Y. S.
    Huang, J. H.
    Ho, C. H.
    PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 4, NO 5, 2007, 4 (05): : 1680 - +
  • [28] Photoreflectance spectroscopy for the study of GaAsSb/InP heterojunction bipolar transistors
    Bru-Chevallier, C
    Chouaib, H
    Arcamone, J
    Benyattou, T
    Lahreche, H
    Bove, P
    THIN SOLID FILMS, 2004, 450 (01) : 151 - 154
  • [29] Gain limitations of scaled InP/InGaAs heterojunction bipolar transistors
    1600, American Institute of Physics Inc. (89):
  • [30] Physical origins of nonlinearity in InP double heterojunction bipolar transistors
    Xu, H.
    Iverson, E. W.
    Cheng, K. Y.
    Feng, M.
    APPLIED PHYSICS LETTERS, 2012, 100 (11)
12345