New symbolically defined model for InP heterojunction bipolar transistors

被引：0
|
作者：
机构：
[1] Qi, Yuhua
[2] Shen, Zhao
[3] He, Rulong
来源：
| 2018年 / Horizon House卷 / 61期
关键词：
Compendex;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
引用
收藏
相关论文
共 50 条
  • [1] New Symbolically Defined Model for InP Heterojunction Bipolar Transistors
    Qi, Yuhua
    Shen, Zhao
    He, Rulong
    MICROWAVE JOURNAL, 2018, 61 (07) : 72 - 80
  • [2] A symbolically defined InP double heterojunction bipolar transistor large-signal model
    Cao Yuxiong
    Jin Zhi
    Ge Ji
    Su Yongbo
    Liu Xinyu
    JOURNAL OF SEMICONDUCTORS, 2009, 30 (12)
  • [3] A symbolically defined InP double heterojunction bipolar transistor large-signal model
    曹玉雄
    金智
    葛霁
    苏永波
    刘新宇
    半导体学报, 2009, 30 (12) : 37 - 41
  • [4] InP/GaAsSb/InP heterojunction bipolar transistors
    Bolognesi, CR
    Dvorak, MW
    Watkins, SP
    COMPOUND SEMICONDUCTORS 2002, 2003, 174 : 203 - 209
  • [5] An improved model for InP/InGaAs double heterojunction bipolar transistors
    Shi, Yuxia
    Jin, Zhi
    Su, Yongbo
    Cao, Yuxiong
    Wang, Yan
    SOLID-STATE ELECTRONICS, 2013, 81 : 163 - 169
  • [6] InP/GaAsSb/InP double heterojunction bipolar transistors
    Bolognesi, CR
    Dvorak, MW
    Watkins, SP
    IEEE LESTER EASTMAN CONFERENCE ON HIGH PERFORMANCE DEVICES, PROCEEDINGS, 2002, : 343 - 351
  • [7] Be diffusion in InGaAs/InP heterojunction bipolar transistors
    Bahl, SR
    Moll, N
    Robbins, VM
    Kuo, HC
    Moser, BG
    Stillman, GE
    IEEE ELECTRON DEVICE LETTERS, 2000, 21 (07) : 332 - 334
  • [8] Ballistic emitter for InP heterojunction bipolar transistors
    Sicault, D
    Demichel, S
    Teissier, R
    Dupuis, C
    Pardo, F
    Mollot, F
    Pelouard, JL
    PROCEEDINGS OF THE 25TH INTERNATIONAL CONFERENCE ON THE PHYSICS OF SEMICONDUCTORS, PTS I AND II, 2001, 87 : 1781 - 1782
  • [9] A Nonlinear Circuit Simulation Model for GaAs and InP Heterojunction Bipolar Transistors
    1600, Horizon House (46):
  • [10] A nonlinear circuit simulation model for GaAs and InP heterojunction bipolar transistors
    MICROWAVE JOURNAL, 2003, 46 (12) : 126 - +
12345