共 50 条
- [41] INTERACTION BETWEEN RADIATION DEFECTS AND GROWN MICRODEFECTS IN SILICON SINGLE-CRYSTALS UKRAINSKII FIZICHESKII ZHURNAL, 1988, 33 (12): : 1851 - 1855
- [42] CHARACTERISTICS OF THE AS-GROWN DEFECTS IN A CZ SILICON SINGLE-CRYSTAL DEFECT RECOGNITION AND IMAGE PROCESSING IN SEMICONDUCTORS AND DEVICES, 1994, (135): : 11 - 20
- [44] INTRINSIC POINT-DEFECTS IN DISLOCATION-FREE SILICON-CRYSTALS HEAVILY DOPED WITH ARSENIC SOVIET PHYSICS SEMICONDUCTORS-USSR, 1985, 19 (03): : 294 - 297
- [45] INTERACTION BETWEEN POINT DEFECTS IN IONIC CRYSTALS BERICHTE DER BUNSEN-GESELLSCHAFT FUR PHYSIKALISCHE CHEMIE, 1968, 72 (01): : 12 - +
- [46] INTERACTION OF POINT DEFECTS WITH PARTICLES AND INCLUSIONS IN CRYSTALS SCRIPTA METALLURGICA, 1969, 3 (07): : 471 - &
- [48] Non-equilibrium thermodynamic analysis on the behaviour of point defects in growing silicon crystals: effects of stress Journal of Materials Science: Materials in Electronics, 1999, 10 : 359 - 363