Interaction of the intrinsic point defects into Cz growing silicon single crystals

被引：0
|
作者：
Verezub, N.A.
Voronkov, V.V.
Molvidskij, M.G.
Prostomolotov, A.I.
机构：
来源：
Poverkhnost Rentgenovskie Sinkhronnye i Nejtronnye Issledovaniya | 2001年 / 10期
关键词：
D O I：
暂无
中图分类号：
学科分类号：
摘要：
引用
收藏
页码：15 / 21
相关论文
共 50 条
  • [1] Two-dimensional model of the intrinsic point defects behaviour during Cz silicon crystals growth
    Prostomolotov, AI
    Verezub, NA
    INTERNATIONAL CONFERENCE ON SOLID STATE CRYSTALS 2000: GROWTH, CHARACTERIZATION, AND APPLICATIONS OF SINGLE CRYSTALS, 2001, 4412 : 97 - 103
  • [2] On the recombination of intrinsic point defects in dislocation-free silicon single crystals
    V. I. Talanin
    I. E. Talanin
    Physics of the Solid State, 2007, 49 : 467 - 471
  • [3] On the recombination of intrinsic point defects in dislocation-free silicon single crystals
    Talanin, V. I.
    Talanin, I. E.
    PHYSICS OF THE SOLID STATE, 2007, 49 (03) : 467 - 471
  • [4] The engineering of intrinsic point defects in silicon wafers and crystals
    Falster, R
    Voronkov, VV
    MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 2000, 73 (1-3): : 87 - 94
  • [5] Intrinsic point defects and reactions in the growth of large silicon crystals
    Falster, R
    Voronkov, VV
    Holzer, JC
    Markgraf, S
    McQuaid, S
    Stagno, LM
    SILICON MATERIALS SCIENCE AND TECHNOLOGY, VOLS 1 AND 2, 1998, : 468 - 489
  • [6] Factors determining the saturation of point defects in growing silicon crystals
    Ebe, T
    JOURNAL OF CRYSTAL GROWTH, 1999, 203 (03) : 387 - 399
  • [7] Nature of Intrinsic Point Defects in InSb Single Crystals.
    Abaeva, T.V.
    Bublik, V.T.
    Morozov, A.N.
    Pereverzev, A.T.
    Neorganiceskie materialy, 1987, 23 (02): : 195 - 197
  • [8] Analytical approximations for the distributions of intrinsic point defects in grown silicon crystals
    Lemke, H
    Südkamp, W
    PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1999, 176 (02): : 843 - 865
  • [9] Behaviour and effects of intrinsic point defects in the growth of large silicon crystals
    Voronkov, VV
    Falster, R
    Holzer, JC
    PROCEEDINGS OF THE SYMPOSIUM ON CRYSTALLINE DEFECTS AND CONTAMINATION: THEIR IMPACT AND CONTROL IN DEVICE MANUFACTURING II, 1997, 97 (22): : 3 - 17
  • [10] Analytical approximations for the distributions of intrinsic point defects in grown silicon crystals
    Institut für Mikroelektronik und Festkörperelektronik, Technische Universität Berlin, Jebensstr. 1, D-10623 Berlin, Germany
    Phys Status Solidi A, 2 (843-865):
12345