Raman and photoluminescence spectra on type II InAs/GaSb superlattices

被引：0
|
作者：
Guo, Jie [1 ,2 ]
Sun, Wei-Guo [1 ,2 ]
Peng, Zhen-Yu [2 ]
Zhou, Zhi-Qiang [3 ]
Xu, Ying-Qiang [3 ]
Niu, Zhi-Chuan [3 ]
机构：
[1] Material School, Northwest Polytechnical University, Xi'an 710000, China
[2] China Airborne Missile Academy, Luoyang 471009, China
[3] Institute of Semiconductors, CAS, Beijing 100083, China
来源：
Hongwai yu Jiguang Gongcheng/Infrared and Laser Engineering | 2009年 / 38卷 / 02期
关键词：
Compendex;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
Temperature
引用
收藏
页码：278 / 281
相关论文
共 50 条
  • [31] Growth and electrical characterization of type II InAs/GaSb superlattices for midwave infrared detection
    Zhang, Lixue
    Sun, Weiguo
    Xu, Yingqiang
    Zhang, Lei
    Zhang, Liang
    Si, Junjie
    INFRARED PHYSICS & TECHNOLOGY, 2014, 65 : 129 - 133
  • [32] nBn structure based on InAs/GaSb type-II strained layer superlattices
    Rodriguez, J. B.
    Plis, E.
    Bishop, G.
    Sharma, Y. D.
    Kim, H.
    Dawson, L. R.
    Krishna, S.
    APPLIED PHYSICS LETTERS, 2007, 91 (04)
  • [33] THE REALIZATION OF TERAHERTZ BAND-GAP FROM InAs/GaSb TYPE II SUPERLATTICES
    Li, L. L.
    Dong, H. M.
    Xu, W.
    Shi, Y. L.
    INTERNATIONAL JOURNAL OF MODERN PHYSICS B, 2011, 25 (07): : 1021 - 1028
  • [34] Type-II InAs/GaSb superlattices for very long wavelength infrared detectors
    Brown, GJ
    Houston, S
    Smulowicz, F
    PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, 2004, 20 (3-4): : 471 - 474
  • [35] Carrier mobility as a function of carrier density in type-II InAs/GaSb superlattices
    Szmulowicz, F.
    Elhamri, S.
    Haugan, H. J.
    Brown, G. J.
    Mitchel, W. C.
    JOURNAL OF APPLIED PHYSICS, 2009, 105 (07)
  • [36] Exploring optimum growth for high quality InAS/GaSb type-II superlattices
    Haugan, HJ
    Grazulis, L
    Brown, GJ
    Mahalingam, K
    Tomich, DH
    JOURNAL OF CRYSTAL GROWTH, 2004, 261 (04) : 471 - 478
  • [37] Modeling and simulation of InAs/GaSb type-II superlattices with different interface layers
    Zhou, Kuan
    Vi, Dandan
    Li, Ming
    Zhao, Liancheng
    Gao, Liming
    2016 17TH INTERNATIONAL CONFERENCE ON ELECTRONIC PACKAGING TECHNOLOGY (ICEPT), 2016, : 780 - 783
  • [38] Type-II InAs/GaSb (InAsSb) superlattices for interband cascade midwavelength detectors
    Hackiewicz, Klaudia
    Martyniuk, Piotr
    OPTICAL ENGINEERING, 2018, 57 (02)
  • [39] THE STRUCTURE OF INAS/GASB SUPERLATTICES
    DECOOMAN, BC
    CARTER, CB
    WICKS, GW
    TANOUE, T
    EASTMAN, LF
    THIN SOLID FILMS, 1989, 170 (01) : 49 - 62
  • [40] MOCVD growth of InAs/GaSb type-II superlattices on InAs substrates for short wavelength infrared detection
    Chen, Ying
    Liu, Jiafeng
    Zhao, Yu
    Teng, Yan
    Hao, Xiujun
    Li, Xin
    Zhu, He
    Zhu, Hong
    Wu, Qihua
    Huang, Yong
    INFRARED PHYSICS & TECHNOLOGY, 2020, 105 (105)
12345