Hetero atomic-layer epitaxy of Ge on Si(100)

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作者：
Matsuyama, Motohiro [1 ]
Sugahara, Satoshi [1 ]
Ikeda, Keiji [1 ]
Uchida, Yasutaka [2 ]
Matsumura, Masakiyo [1 ]
机构：
[1] Department of Physical Electronics, Tokyo Institute of Technology, 2-12-1 O-okayama, Meguro-ku, Tokyo 152-8550, Japan
[2] Department of Media Science, Teikyo Univ. of Sci. and Technology, 2525 Yatsusawa, Uenohara-machi, Kitatsuru-gun, Yamanashi 409-0193, Japan
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| 1600年 / JJAP, Tokyo, Japan卷 / 39期
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