The effects of cotunneling and spin flip on the spin polarized transport in a ferromagnetic single electron transistor

被引：0
|
作者：
Ma, Minjie J. [1 ]
Jalil, Mansoor Bin Adul [1 ]
Tan, Seng Ghee [2 ]
机构：
[1] Information Storage Materials Laboratory, Electronic and Computer Engineering Department, National University of Singapore, 117576, Singapore, Singapore
[2] Data Storage Institute, National University of Singapore, 117608, Singapore, Singapore
来源：
IEEE Transactions on Magnetics | 2008年 / 44卷 / 11 PART 2期
关键词：
D O I：
10.1109/TMAG.2008.2002404
中图分类号：
学科分类号：
摘要：
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页码：2658 / 2661
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