Improved emission efficiency of 210-nm deep-ultraviolet aluminum nitride light-emitting diode

被引：0
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作者：
Taniyasu, Yoshitaka [1 ]
Kasu, Makoto [1 ]
机构：
[1] NTT Basic Research Laboratories, Atsugi-Shi, 243-0198, Japan
来源：
NTT Technical Review | 2010年 / 8卷 / 08期
关键词：
Aluminum nitride (AlN) - Crystal planes - Deep ultraviolet - Deep-ultraviolet light-emitting diodes - Emission efficiencies - Emission intensity - Emitting surface;
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