Performance improvement of AlGaN/GaN HEMTs by surface treatment prior to Si3N4 passivation

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作者：
Institute of Microelectronics, Chinese Acad. of Sci., Beijing 100029, China [1 ]
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来源：
Pan Tao Ti Hsueh Pao | 2008年 / 2卷 / 329-333期
关键词：
Aluminum gallium nitride - Deposition - Hydrochloric acid - Hydrofluoric acid - Passivation - Surface treatment - X ray photoelectron spectroscopy;
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页码：329 / 333
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