Enhanced nucleation and growth of HfO2 thin films grown by atomic layer deposition on graphene

被引：0
|
作者：
机构：
[1] [1,Kim, Soo Bin
[2] 1,Ahn, Yeong Hwan
[3] 1,Park, Ji-Yong
[4] 1,Lee, Sang Woon
来源：
Lee, Sang Woon (slee01@ajou.ac.kr) | 2018年 / Elsevier Ltd卷 / 742期
关键词：
D O I：
暂无
中图分类号：
学科分类号：
摘要：
引用
收藏
相关论文
共 50 条
  • [31] Uniformity of HfO2 Thin Films Prepared on Trench Structures via Plasma-Enhanced Atomic Layer Deposition
    Choi, Boyun
    Kim, Hyeong-U
    Jeon, Nari
    NANOMATERIALS, 2023, 13 (01)
  • [32] Atomic layer deposition of epitaxial HfO2 thin films on r-cut sapphire
    Hugo Mändar
    Raul Rammula
    Aleks Aidla
    Jaan Aarik
    Journal of Materials Research, 2013, 28 : 1680 - 1686
  • [33] Atomic layer deposition of epitaxial HfO2 thin films on r-cut sapphire
    Maendar, Hugo
    Rammula, Raul
    Aidla, Aleks
    Aarik, Jaan
    JOURNAL OF MATERIALS RESEARCH, 2013, 28 (13) : 1680 - 1686
  • [34] Cation diffusion in polycrystalline thin films of monoclinic HfO2 deposited by atomic layer deposition
    Mueller, Michael P.
    Pingen, Katrin
    Hardtdegen, Alexander
    Aussen, Stephan
    Kindsmueller, Andreas
    Hoffmann-Eifert, Susanne
    De Souza, Roger A.
    APL MATERIALS, 2020, 8 (08)
  • [35] Ferroelectric properties of lightly doped La:HfO2 thin films grown by plasma-assisted atomic layer deposition
    Kozodaev, M. G.
    Chernikova, A. G.
    Korostylev, E. V.
    Park, M. H.
    Schroeder, U.
    Hwang, C. S.
    Markeev, A. M.
    APPLIED PHYSICS LETTERS, 2017, 111 (13)
  • [36] Analytical characterization of process parameter influence on the initial growth and crystallinity of atomic layer deposition HfO2 thin films
    Blin, D
    Rochat, N
    Rolland, G
    Holliger, P
    Martin, F
    Damlencourt, JF
    Lardin, T
    Besson, P
    Haukka, S
    Séméria, MN
    ANALYTICAL AND DIAGNOSTIC TECHNIQUES FOR SEMICONDUCTOR MATERIALS, DEVICES, AND PROCESSES, 2003, 2003 (03): : 233 - 242
  • [37] Controlled growth of HfO2 thin films by atomic layer deposition from cyclopentadienyl-type precursor and water
    Niinistö, J
    Putkonen, M
    Niinistö, L
    Stoll, SL
    Kukli, K
    Sajavaara, T
    Ritala, M
    Leskelä, M
    JOURNAL OF MATERIALS CHEMISTRY, 2005, 15 (23) : 2271 - 2275
  • [38] Ultrathin HfO2 films grown on silicon by atomic layer deposition for advanced gate dielectrics applications
    Gusev, EP
    Cabral, C
    Copel, M
    D'Emic, C
    Gribelyuk, M
    MICROELECTRONIC ENGINEERING, 2003, 69 (2-4) : 145 - 151
  • [39] Tuning the Performance of Pt/HfO2/Ti/Pt ReRAM Devices obtained from Plasma-Enhanced Atomic Layer Deposition for HfO2 Thin Films
    Hardtdegen, A.
    Zhang, H.
    Hoffmann-Eifert, S.
    ATOMIC LAYER DEPOSITION APPLICATIONS 12, 2016, 75 (06): : 177 - 184
  • [40] Atomic layer deposition of HfO2: Effect of structure development on growth rate, morphology and optical properties of thin films
    Rammula, Raul
    Aarik, Jaan
    Maendar, Hugo
    Ritslaid, Peeter
    Sammelselg, Vaeino
    APPLIED SURFACE SCIENCE, 2010, 257 (03) : 1043 - 1052
12345