Dependence of phosphorus gettering and hydrogen passivation efficacy on grain boundary type in multicrystalline silicon

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作者：
Department of Physics, University of Konstanz, 78464 Konstanz, Germany [1 ]
不详 [2 ]
不详 [3 ]
不详 [4 ]
不详 [5 ]
不详 [6 ]
机构：
[1] Karzel, P.
[2] Ackermann, M.
[3] Gröner, L.
[4] Reimann, C.
[5] Zschorsch, M.
[6] Meyer, S.
[7] Kiessling, F.
[8] Riepe, S.
[9] Hahn, G.
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| 1600年 / American Institute of Physics Inc.卷 / 114期
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