Planar hall effect and magnetic anisotropy in a Mn δ-doped GaAs/p-AlGaAs heterostructure

被引：0
|
作者：
Nazmul, Ahsan M. [1 ]
Lin, Hung-Ta [2 ]
Ohya, Shinobu [1 ,3 ]
Tanaka, Masaaki [1 ,3 ]
机构：
[1] Department of Electronic Engineering, University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656, Japan
[2] Department of Materials Science and Engineering, National TsingHua University, Hsinchu 300, Taiwan
[3] Japan Science and Technology Agency, 4-1-8 Honcho, Kawaguchi, Saitama 332-0012, Japan
来源：
IEEJ Transactions on Electrical and Electronic Engineering | 2008年 / 3卷 / 04期
关键词：
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学科分类号：
摘要：
Heterojunctions - III-V semiconductors - Semiconductor doping - Spin Hall effect - Domain walls - Manganese - Gallium arsenide - Magnetization reversal - Semiconducting gallium - Aluminum gallium arsenide
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页码：394 / 398
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