Structural, electrical, and optical properties of defects in Si-doped GaN grown by molecular-beam epitaxy on hydride vapor phase epitaxy GaN on sapphire

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作者：
Laukkanen, P. [1 ]
Lehkonen, S. [1 ]
Uusimaa, P. [1 ]
Pessa, M. [1 ]
Oila, J. [2 ]
Hautakangas, S. [2 ]
Saarinen, K. [2 ]
Likonen, J. [3 ]
Keränen, J. [4 ]
机构：
[1] Laukkanen, P.
[2] Lehkonen, S.
[3] Uusimaa, P.
[4] Pessa, M.
[5] Oila, J.
[6] Hautakangas, S.
[7] Saarinen, K.
[8] Likonen, J.
[9] Keränen, J.
来源：
Laukkanen, P. | 1600年 / American Institute of Physics Inc.卷 / 92期
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