共 50 条
- [31] Properties of epitaxial AlN thin film deposited on sapphire substrate by ECR plasma 2013 IEEE 6TH INTERNATIONAL CONFERENCE ON ADVANCED INFOCOMM TECHNOLOGY (ICAIT), 2013, : 69 - +
- [32] Stress and strain in heteroepitaxial diamond thin film on Si(100) observed by X-ray diffraction and X-ray diffraction topography DIAMOND FILMS AND TECHNOLOGY, 1998, 8 (03): : 131 - 141
- [33] SUBSTRATE RADIATION IN X-RAY ANALYSIS OF THIN SPECIMENS SIEMENS ZEITSCHRIFT, 1978, 52 (02): : 93 - 96
- [34] Growth and x-ray characterization of an InN film on sapphire prepared by metallorganic vapor phase epitaxy Japanese Journal of Applied Physics, Part 2: Letters, 1997, 36 (12 B):
- [35] Growth and X-ray characterization of an InN film on sapphire prepared by metalorganic vapor phase epitaxy JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1997, 36 (12B): : L1625 - L1627
- [37] Characterization of polycrystalline gradient thin film by X-ray diffraction method Chinese Physics, 2001, 9 (04): : 284 - 289
- [38] Characterization of polycrystalline gradient thin film by X-ray diffraction method CHINESE PHYSICS, 2000, 9 (04): : 284 - 289
- [40] High resolution X-ray diffraction and X-ray topography study of GaN on sapphire MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 1999, 64 (02): : 99 - 106