Effect of different dopants on photoelectrons decay characteristic in AgCl microcrystals

Electron trap dopants can obviously improve the photoelectrons decay characteristic and thus improve the physical performance of the microcrystal materials. By microwave absorption and dielectric spectrum measure technique, the decay spectra of the free and shallow-trapped photoelectrons in cubic AgCl microcrystals doped with different contents of K4[Ru(CN)6] and (NH4)2IrCl6 at 30%Ag are obtained. The results show that as for K4[Ru(CN)6] doping, with the doping content increasing, the free photoelectrons decay time gradually increases from 157 ns to 520 ns, and the free photoelectrons decay time for all the doped samples is longer than that of the undoped samples. But for (NH4)2IrCl6 doping, with the doping content increasing, the free photoelectrons decay time gradually decreases from 126 ns to 45 ns, and the free photoelectrons decay time for all the doped samples is shorter than that of the undoped samples. By analysis, the K4[Ru(CN)6] doping introduces shallow electron traps which can trap photoelectrons temporarily, but the (NH4)2IrCl6 doping introduces deep electron traps which can trap photoelectrons for longer time in AgCl. By analyzing the photoelectrons decay kinetics, it is obtained that the types of dopants have different effects on decay section of the photoelectrons. Two first-order exponential decay sections occur as for the introduction of shallow electron traps but one for the deep electron traps.