Achievement of high density InAs quantum dots on InP (311)B substrate emitting at 1.55 μm

被引：0
|
作者：
机构：
[1] Caroff, P.
[2] Bertru, N.
[3] Le Corre, A.
[4] Dehaese, O.
[5] Rohel, T.
[6] Alghoraibi, I.
[7] Folliot, H.
[8] Loualiche, S.
来源：
Caroff, P. | 1600年 / Japan Society of Applied Physics卷 / 44期
关键词：
Atomic force microscopy - Molecular beam epitaxy - Nanostructured materials - Photoluminescence - Sampling - Semiconducting indium phosphide - Telecommunication systems;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
The As flux effect on InAs quantum dots formed by gas source molecular beam epitaxy on InP substrates, oriented following the (311)B crystallographic direction has been studied. Atomic force microscopy images show that the quantum dot (QD) density dramatically increases and quantum dot sizes decrease, when decreasing the As pressure. Moreover, the size dispersion is narrowed. Photoluminescence measurements on the high QD density samples is shifted to higher energy, toward the telecommunication important 1.55 μm emission. ©2005 The Japan Society of Applied Physics.
引用
收藏
页码：33 / 36
相关论文
共 50 条
  • [21] Room temperature laser emission of 1.5 μm from InAs/InP(311)B quantum dots
    Paranthoen, C
    Bertru, N
    Lambert, B
    Dehaese, O
    Le Corre, A
    Even, J
    Loualiche, S
    Lissillour, F
    Moreau, G
    SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2002, 17 (02) : L5 - L7
  • [22] InAs self-assembled quantum dots grown on an InP (311)B substrate by molecular beam epitaxy
    Li, YF
    Wang, JZ
    Ye, XL
    Xu, B
    Liu, FQ
    Ding, D
    Zhang, JF
    Wang, ZG
    JOURNAL OF APPLIED PHYSICS, 2001, 89 (07) : 4186 - 4188
  • [23] Carrier relaxation dynamics 1.55 μm InAs/InP quantum dots under high resonant excitation
    Labbe, C.
    Cornet, C.
    Folliot, H.
    Even, J.
    Caroff, P.
    Levallois, C.
    Dehaese, O.
    Le Corre, A.
    Loualiche, S.
    PHYSICS OF SEMICONDUCTORS, PTS A AND B, 2007, 893 : 991 - +
  • [24] Low density 1.55 μm InAs/InGaAsP/InP (100) quantum dots enabled by an ultrathin GaAs interlayer
    van Veldhoven, P. J.
    Chauvin, N.
    Fiore, A.
    Notzel, R.
    APPLIED PHYSICS LETTERS, 2009, 95 (11)
  • [25] Growth of InAs/InP-based quantum dots for 1.55 μm laser applications
    Poole, P. J.
    Kaminska, K.
    Barrios, P.
    Lu, Z.
    Liu, J.
    JOURNAL OF CRYSTAL GROWTH, 2009, 311 (06) : 1482 - 1486
  • [26] Temperature stabilized 1.55 μm photoluminescence in InAs quantum dots grown on InAlGaAs/InP
    Zhang, ZH
    Cheng, KY
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2004, 22 (03): : 1508 - 1511
  • [27] Optimization of InAs quantum dots formation on (311)A substrate
    Saravanan, S.
    Vaccaro, P. O.
    Ocampo, J. M. Zanardi
    Perissol, C.
    Kubota, K.
    Saito, N.
    JOURNAL OF CRYSTAL GROWTH, 2005, 275 (1-2) : E2257 - E2261
  • [28] Stacking of over 150 layers of InAs quantum dots on InP(311)B substrates
    Akahane, K
    Yamamoto, N
    Gozu, S
    Ohtani, N
    2004 International Conference on Indium Phosphide and Related Materials, Conference Proceedings, 2004, : 85 - 88
  • [29] Evidence of lateral coupling on the carrier dynamics in InAs/InP(311)B quantum dots
    Dore, F.
    Labbe, C.
    Folliot, H.
    Nakkar, A.
    Paranthoen, C.
    Chevalier, N.
    Tavernier, K.
    Even, J.
    Loualiche, S.
    Lagarde, D.
    Balocchi, A.
    Marie, X.
    2008 IEEE 20TH INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS (IPRM), 2008, : 275 - +
  • [30] Two-dimensional ordering of self-assembled InAs quantum dots grown on (311)B InP substrate
    Li, YF
    Liu, FQ
    Xu, B
    Ye, XL
    Ding, D
    Sun, ZZ
    Jiang, WH
    Liu, HY
    Zhang, YC
    Wang, ZG
    JOURNAL OF CRYSTAL GROWTH, 2000, 219 (1-2) : 17 - 21
12345