High Fτ and Fmax InAlAs/InGaAs transferred-substrate HBTs

被引：0
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作者：
Betser, Yoram [1 ]
Mensa, Dino [1 ]
Jaganathan, Shri [1 ]
Mathew, Thomas [1 ]
Rodwell, Mark J. [1 ]
机构：
[1] Univ of California Santa Barbara, United States
来源：
Annual Device Research Conference Digest | 2000年
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2
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页码：141 / 142
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