Junction spectroscopy techniques and deep-level defects in semiconductors

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作者：
机构：
[1] Peaker, A.R.
[2] Markevich, V.P.
[3] Coutinho, J.
来源：
| 2018年 / American Institute of Physics Inc.卷 / 123期
关键词：
The work in the UK was supported by the Engineering and Physical Sciences Research Council via the SuperSilicon PV Project (No. EP/M024911/1) and Project No. EP/ P015581/1 Instrument to identify defects in wide bandgap materials. J.C. would like to thank the support by the Science for Peace and Security NATO Program through Project No. SPS 985215 and by the Fundação para a Ciência e a Tecnologia (FCT) through Project No. UID/CTM/50025/ 2013. We would like to thank M. P. Hallsall; I; D; Hawkins; J; Mullins; S; Hamersley; and I. Capan for comments and discussions on the manuscript;
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