Nanoscale characterization of GaN/InGaN multiple quantum wells on GaN nanorods by photoluminescence spectroscopy

被引：0
|
作者：
机构：
[1] Chen, Weijian
[2] Wen, Xiaoming
[3] 3,Latzel, Michael
[4] Yang, Jianfeng
[5] Huang, Shujuan
[6] Shrestha, Santosh
[7] Patterson, Robert
[8] 3,5,Christiansen, Silke
[9] Conibeer, Gavin
来源：
| 2017年 / SPIE卷 / 10104期
关键词：
482.2.1 Gems - 539.2.1 Protection Methods - 712.1 Semiconducting Materials - 714.2 Semiconductor Devices and Integrated Circuits - 741.1 Light/Optics - 741.3 Optical Devices and Systems - 746 Imaging Techniques - 761 Nanotechnology - 933 Solid State Physics - 941.4 Optical Variables Measurements - 951 Materials Science;
D O I：
101040U
中图分类号：
学科分类号：
摘要：
11
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