Nanoscale characterization of GaN/InGaN multiple quantum wells on GaN nanorods by photoluminescence spectroscopy

被引：0
|
作者：
机构：
[1] Chen, Weijian
[2] Wen, Xiaoming
[3] 3,Latzel, Michael
[4] Yang, Jianfeng
[5] Huang, Shujuan
[6] Shrestha, Santosh
[7] Patterson, Robert
[8] 3,5,Christiansen, Silke
[9] Conibeer, Gavin
来源：
| 2017年 / SPIE卷 / 10104期
关键词：
482.2.1 Gems - 539.2.1 Protection Methods - 712.1 Semiconducting Materials - 714.2 Semiconductor Devices and Integrated Circuits - 741.1 Light/Optics - 741.3 Optical Devices and Systems - 746 Imaging Techniques - 761 Nanotechnology - 933 Solid State Physics - 941.4 Optical Variables Measurements - 951 Materials Science;
D O I：
101040U
中图分类号：
学科分类号：
摘要：
11
引用
收藏
相关论文
共 50 条
  • [1] Nanoscale characterization of GaN/InGaN multiple quantum wells on GaN nanorods by photoluminescence spectroscopy
    Chen, Weijian
    Wen, Xiaoming
    Latzel, Michael
    Yang, Jianfeng
    Huang, Shujuan
    Shrestha, Santosh
    Patterson, Robert
    Christiansen, Silke
    Conibeer, Gavin
    GALLIUM NITRIDE MATERIALS AND DEVICES XII, 2017, 10104
  • [2] Nanoscale Characterization of Carrier Dynamic and Surface Passivation in InGaN/GaN Multiple Quantum Wells on GaN Nanorods
    Chen, Weijian
    Wen, Xiaoming
    Latzel, Michael
    Heilmann, Martin
    Yang, Jianfeng
    Dai, Xi
    Huang, Shujuan
    Shrestha, Santosh
    Patterson, Robert
    Christiansen, Silke
    Conibeert, Gavin
    ACS Applied Materials & Interfaces, 2016, 8 (46) : 31887 - 31893
  • [3] Photoluminescence characteristics of GaN/InGaN/GaN quantum wells
    Shmagin, IK
    Muth, JF
    Kolbas, RM
    Krishnankutty, S
    Keller, S
    Abare, AC
    Coldren, LA
    Mishra, UK
    DenBaars, SP
    JOURNAL OF ELECTRONIC MATERIALS, 1997, 26 (03) : 325 - 329
  • [4] Photoluminescence studies of GaN and InGaN/GaN quantum wells
    Lee, CW
    Kim, ST
    Lim, KS
    Viswanath, AK
    Lee, JI
    Lee, HG
    Yang, GM
    Lim, KY
    JOURNAL OF THE KOREAN PHYSICAL SOCIETY, 1999, 35 (03) : 280 - 285
  • [5] Investigation of photoluminescence dynamics in InGaN/GaN multiple quantum wells
    Lin, Tao
    Qiu, Zhi Ren
    Yang, Jer-Ren
    Ding, Long Wei
    Gao, Yi Hua
    Feng, Zhe Chuan
    MATERIALS LETTERS, 2016, 173 : 170 - 173
  • [6] Influence of in volatilization on photoluminescence in InGaN/GaN multiple quantum wells
    Shi, Kaiju
    Wang, Chengxin
    Li, Rui
    Qu, Shangda
    Wu, Zonghao
    Deng, Jianyang
    Xu, Mingsheng
    Xu, Xiangang
    Ji, Ziwu
    MATERIALS EXPRESS, 2021, 11 (12) : 2033 - 2038
  • [7] Influence of dislocations on photoluminescence of InGaN/GaN multiple quantum wells
    Zhang, JC
    Jiang, DS
    Sun, Q
    Wang, JF
    Wang, YT
    Liu, JP
    Chen, J
    Jin, RQ
    Zhu, JJ
    Yang, H
    Dai, T
    Jia, QJ
    APPLIED PHYSICS LETTERS, 2005, 87 (07)
  • [8] Origin of multiple peak photoluminescence in InGaN/GaN multiple quantum wells
    1600, American Institute of Physics Inc. (88):
  • [9] Origin of multiple peak photoluminescence in InGaN/GaN multiple quantum wells
    Pozina, G
    Bergman, JP
    Monemar, B
    Takeuchi, T
    Amano, H
    Akasaki, I
    JOURNAL OF APPLIED PHYSICS, 2000, 88 (05) : 2677 - 2681
  • [10] Ultrafast carrier dynamics in GaN/InGaN multiple quantum wells nanorods
    Chen, Weijian
    Wen, Xiaoming
    Latzel, Michael
    Yang, Jianfeng
    Huang, Shujuan
    Shrestha, Santosh
    Patterson, Robert
    Christiansen, Silke
    Conibeer, Gavin
    NANOPHOTONICS AUSTRALASIA 2017, 2017, 10456
12345