Study on energy band of InGaN/GaN self-assembled quantum dots by deep-level transient spectroscopy

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Department of Physics and Quantum Photonic SRC, Hanyang University, Seoul 133-791, Korea, Republic of [1 ]
不详 [2 ]
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| 1600年 / 5670-5672卷 / July 26, 2005期
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摘要：
Activation energy - Band structure - Deep level transient spectroscopy - Electric variables measurement - Electron energy levels - Gallium nitride - Point defects - Semiconducting indium compounds
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