Effects of substrate temperature on heteroepitaxial growth of 3C-SiC thin films by MBE on Si(111) substrate

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National Synchrotron Radiation Laboratory, University of Science and Technology of China, Hefei 230029, China [1 ]
不详 [2 ]
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Wuji Cailiao Xuebao | 2007年 / 4卷 / 720-724期
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页码：720 / 724
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