Structural and electrical characteristics of thin film transistor employing an oriented crystalline InGaZnO channel

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作者：
Department of Electronics Engineering, Institute of Electronics, National Chiao Tung University, Hsinchu [1 ]
30010, Taiwan
不详 [2 ]
30010, Taiwan
不详 [3 ]
10610, Taiwan
不详 [4 ]
300, Taiwan
机构：
来源：
Jpn. J. Appl. Phys. | / 4卷
关键词：
Compendex;
D O I：
04DF05
中图分类号：
学科分类号：
摘要：
Interfaces (materials) - Thin film circuits - Thin film transistors - Thin films - Zinc compounds - Gallium compounds - Semiconducting indium compounds - Thermodynamic stability - X ray diffraction
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