Design of a dual-directional diode-triggered SCR for low voltage ESD protection

被引：0
|
作者：
Xu Q. [1 ]
Liang H. [1 ]
Gu X. [1 ]
机构：
[1] Engineering Research Center of IoT Technology Applications (Ministry of Education), Department of Electronic Engineering, Jiangnan University, Wuxi
来源：
IEEJ Transactions on Electronics, Information and Systems | 2020年 / 140卷 / 06期
基金：
中国国家自然科学基金; 中国博士后科学基金;
关键词：
Diode-triggered silicon controlled rectifier; Dual-directional ESD protection; Electrostatic discharge (ESD);
D O I：
10.1541/ieejeiss.140.673
中图分类号：
学科分类号：
摘要：
A novel dual-directional diode-triggered silicon controlled rectifier (DDTSCR) for low voltage electrostatic discharge (ESD) protection was designed and realized in a 0.18-µm CMOS process. Compared to the single-directional diode-triggered SCR (SDTSCR), the DDTSCR has dual-directional ESD protection performance due to the symmetric structure, and its ESD protection efficiency per unit area is about 2 times larger than that of SDTSCR under opposite ESD stresses, while remaining the similar trigger voltage of 1.68 V and the figure of merit. The human body model robustness of the DDTSCR measured by the transmission line pulse system is up to 8000 V with an area of 1400 µm2, suitable for low voltage ESD protection requirements. © 2020 The Institute of Electrical Engineers of Japan.
引用
收藏
页码：673 / 674
页数：1
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