High-rate deposition of amorphous silicon films by atmospheric pressure plasma CVD

被引:0
|
作者
机构
[1] Mori, Yuzo
[2] Yoshii, Kumayasu
[3] 1,Yasutake, Kiyoshi
[4] Kakiuchi, Hiroaki
来源
Mori, Yuzo | 2000年 / Osaka Univ, Osaka, Japan卷 / 50期
关键词
D O I
暂无
中图分类号
学科分类号
摘要
引用
收藏
相关论文
共 50 条
  • [41] Progress in high deposition rate amorphous and polycrystalline silicon materials using the pulsed plasma and hot wire CVD deposition techniques
    Madan, A
    Morrison, S
    Kuwahara, H
    SOLAR ENERGY MATERIALS AND SOLAR CELLS, 1999, 59 (1-2) : 51 - 58
  • [42] Progress in high deposition rate amorphous and polycrystalline silicon materials using the pulsed plasma and hot wire CVD deposition techniques
    Madan, Arun
    Morrison, Scott
    Kuwahara, Hajime
    Solar Energy Materials and Solar Cells, 1999, 59 (01): : 51 - 58
  • [44] High-rate deposition of silicon films in a magnetron discharge with liquid target
    Tumarkin, A.
    Zibrov, M.
    Khodachenko, G.
    Tumarkina, D.
    6TH INTERNATIONAL WORKSHOP & SUMMER SCHOOL ON PLASMA PHYSICS 2014 (IWSSPP'14), 2016, 768
  • [45] DEPOSITION OF SILICON-NITRIDE FILMS BY HIGH-RATE REACTIVE SPUTTERING
    HOSHI, Y
    NAOE, M
    YAMANAKA, S
    JAPANESE JOURNAL OF APPLIED PHYSICS, 1980, 19 : 71 - 74
  • [46] Properties of amorphous carbon films synthesized by atmospheric pressure glow plasma CVD method
    Kodama, Hideyuki
    Iizumi, Satoshi
    Nakaya, Masaki
    Shirakura, Akira
    Hotta, Atsushi
    Suzuki, Tetsuya
    JOURNAL OF PHOTOPOLYMER SCIENCE AND TECHNOLOGY, 2006, 19 (05) : 673 - 678
  • [47] Plasma enhanced chemical vapour deposition of hydrogenated amorphous silicon at atmospheric pressure
    Moravej, M
    Babayan, SE
    Nowling, GR
    Iang, X
    Hicks, RF
    PLASMA SOURCES SCIENCE & TECHNOLOGY, 2004, 13 (01): : 8 - 14
  • [48] Deposition of silicon dioxide films with an atmospheric-pressure plasma jet
    Babayan, SE
    Jeong, JY
    Tu, VJ
    Park, J
    Selwyn, GS
    Hicks, RF
    PLASMA SOURCES SCIENCE & TECHNOLOGY, 1998, 7 (03): : 286 - 288
  • [49] High-rate chemical vapor deposition of nanocrystalline silicon carbide films by radio frequency thermal plasma
    Liao, F
    Park, S
    Larson, JM
    Zachariah, MR
    Girshick, SL
    MATERIALS LETTERS, 2003, 57 (13-14) : 1982 - 1986
  • [50] Enhanced deposition rate of diamond in atmospheric pressure plasma CVD: Effects of a secondary discharge
    Baldwin, SK
    Owano, TG
    Zhao, MS
    Kruger, CH
    DIAMOND AND RELATED MATERIALS, 1997, 6 (2-4) : 202 - 206