Negative-resistance oscillations characteristics of a new type silicon magnetic sensitive transistor on MEMS

被引：0

作者：

Zhao, Xiaofeng ^{[1
]}

Wen, Dianzhong ^{[1
]}

机构：

[1] Key Laboratory of Integrated Circuits, Heilongjiang University, Harbin 150080, China

来源：

Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors | 2005年 / 26卷 / 06期

关键词：

D O I：

暂无

中图分类号：

学科分类号：

摘要：

引用

页码：1214 / 1217

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