Research on parameter extraction method for GaN HEMTs small signal equivalent circuit model

被引：0
|
作者：
Wen, Zhang [1 ]
Xu, Yuehang [1 ]
Xu, Ruimin [1 ]
机构：
[1] University of Electronic Science and Technology of China, Chengdu,Sichuan, China
来源：
Dianbo Kexue Xuebao/Chinese Journal of Radio Science | 2015年 / 30卷 / 04期
关键词：
High electron mobility transistors;
D O I：
10.13443/j.cjors.2014090802
中图分类号：
学科分类号：
摘要：
引用
收藏
页码：772 / 776
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