Gold catalyzed growth of silicon nanowires by plasma enhanced chemical vapor deposition

被引:0
|
作者
Hofmann, S. [1 ]
Ducati, C. [1 ]
Neill, R.J. [1 ]
Piscanec, S. [1 ]
Ferrari, A.C. [1 ]
Geng, J. [2 ]
Dunin-Borkowski, R.E. [3 ]
Robertson, J. [1 ]
机构
[1] Hofmann, S.
[2] Ducati, C.
[3] Neill, R.J.
[4] Piscanec, S.
[5] Ferrari, A.C.
[6] Geng, J.
[7] Dunin-Borkowski, R.E.
[8] Robertson, J.
来源
Hofmann, S. (sh315@eng.cam.ac.uk) | 1600年 / American Institute of Physics Inc.卷 / 94期
关键词
D O I
暂无
中图分类号
学科分类号
摘要
37
引用
收藏
相关论文
共 50 条
  • [31] Effects of substrates on silicon oxide nanowires growth by thermal chemical vapor deposition
    Yan, XQ
    Liu, ZQ
    Tang, DS
    Ci, LJ
    Liu, DF
    Zhou, ZP
    Liang, YX
    Yuan, HJ
    Zhou, WY
    Wang, G
    ACTA PHYSICA SINICA, 2003, 52 (02) : 454 - 458
  • [32] Low temperature silicon dioxide film deposition by remote plasma enhanced chemical vapor deposition: growth mechanism
    Park, YB
    Rhee, SW
    SURFACE & COATINGS TECHNOLOGY, 2004, 179 (2-3): : 229 - 236
  • [33] Growth of silicon nanowires by chemical vapor deposition: approach by charged cluster model
    Hwang, NM
    Cheong, WS
    Yoon, DY
    Kim, DY
    JOURNAL OF CRYSTAL GROWTH, 2000, 218 (01) : 33 - 39
  • [34] Growth of graphene on Cu by plasma enhanced chemical vapor deposition
    Terasawa, Tomo-o
    Saiki, Koichiro
    CARBON, 2012, 50 (03) : 869 - 874
  • [35] Crystalline GeSn growth by plasma enhanced chemical vapor deposition
    Dou, Wei
    Alharthi, Bader
    Grant, Perry C.
    Grant, Joshua M.
    Mosleh, Aboozar
    Tran, Huong
    Du, Wei
    Mortazavi, Mansour
    Li, Baohua
    Naseem, Hameed
    Yu, Shui-Qing
    OPTICAL MATERIALS EXPRESS, 2018, 8 (10): : 3220 - 3229
  • [36] Effect of Plasma Power and Flow Rate of Silane Gas on Diameter of Silicon Nanowires Grown by Plasma Enhanced Chemical Vapor Deposition
    Hamidinezhad, Habib
    Wahab, Yussof
    Othaman, Zulkafli
    Sumpono, Imam
    SAINS MALAYSIANA, 2011, 40 (01): : 63 - 66
  • [37] Vapor-liquid-solid growth of silicon nanowires by chemical vapor deposition on implanted templates
    Christiansen, S.
    Schneider, R.
    Scholz, R.
    Goesele, U.
    Stelzner, Th.
    Andrae, G.
    Wendler, E.
    Wesch, W.
    JOURNAL OF APPLIED PHYSICS, 2006, 100 (08)
  • [38] Soft landing of silicon nanocrystals in plasma enhanced chemical vapor deposition
    Chaabane, Nihed
    Suendo, Veinardi
    Vach, Holger
    Cabarrocasa, Pere Roca i
    APPLIED PHYSICS LETTERS, 2006, 88 (20)
  • [39] PLASMA ENHANCED CHEMICAL VAPOR-DEPOSITION OF SILICON EPITAXIAL LAYERS
    REIF, R
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1984, 131 (03) : C95 - C95
  • [40] SILICON EPITAXIAL LAYERS BY PLASMA ENHANCED CHEMICAL VAPOR-DEPOSITION
    REIF, R
    ABSTRACTS OF PAPERS OF THE AMERICAN CHEMICAL SOCIETY, 1985, 189 (APR-): : 45 - INOR