共 50 条
- [41] Photoluminescence characteristics of InAs self-assembled quantum dots capped with InGaAs and InAlAs layers Bandaoti Guangdian/Semiconductor Optoelectronics, 2008, 29 (03): : 349 - 352
- [42] Investigation of interband optical transitions by near-resonant magneto-photoluminescence in InAs/GaAs quantum dots EUROPEAN PHYSICAL JOURNAL B, 2009, 67 (01): : 51 - 56
- [44] Investigation of interband optical transitions by near-resonant magneto-photoluminescence in InAs/GaAs quantum dots The European Physical Journal B, 2009, 67 : 51 - 56
- [46] Electron g-factor in coupled quantum wells CdTe and CdMnTe INTERNATIONAL CONFERENCE PHYSICA.SPB/2019, 2019, 1400
- [47] Photoluminescence studies of InAs/GaAs quantum dots covered by InGaAs layers MATERIALS SCIENCE AND ENGINEERING B-ADVANCED FUNCTIONAL SOLID-STATE MATERIALS, 2010, 166 (01): : 46 - 49
- [50] Electron and hole g-factor oscillations in CdTe-based modulation-doped quantum wells Surf Sci, 1-3 (460-463):