Compact low-half-wave-voltage thin film lithium niobate electro-optic phase modulator fabricated by photolithography-assisted chemo-mechanical etching (PLACE)

被引：0

作者：

Gao, Lang ^{[1
,2
,3
]}

Liang, Youting ^{[4
]}

Chen, Jinming ^{[4
]}

Yu, Jianping ^{[4
]}

Qi, Jia ^{[4
]}

Song, Lvbin ^{[4
]}

Liu, Jian ^{[4
]}

Liu, Zhaoxiang ^{[4
]}

Fang, Zhiwei ^{[4
]}

Qi, Hongxin ^{[4
,5
]}

Cheng, Ya ^{[1
,2
,4
,5
,6
,7
,8
,9
,10
]}

机构：

[1] Chinese Acad Sci, Shanghai Inst Opt & Fine Mech SIOM, State Key Lab High Field Laser Phys, Shanghai 201800, Peoples R China

[2] Chinese Acad Sci, Shanghai Inst Opt & Fine Mech SIOM, CAS Ctr Excellence Ultraintense Laser Sci, Shanghai 201800, Peoples R China

[3] Univ Chinese Acad Sci, Ctr Mat Sci & Optoelect Engn, Beijing 100049, Peoples R China

[4] East China Normal Univ, Sch Phys & Elect Sci, Extreme Optoelectromech Lab XXL, Shanghai 200241, Peoples R China

[5] East China Normal Univ, State Key Lab Precis Spect, Shanghai 200062, Peoples R China

[6] Shanxi Univ, Collaborat Innovat Ctr Extreme Opt, Taiyuan 030006, Shanxi, Peoples R China

[7] Shandong Normal Univ, Collaborat Innovat Ctr Light Manipulat & Applicat, Jinan 250358, Peoples R China

[8] Hefei Natl Lab, Hefei 230088, Peoples R China

[9] East China Normal Univ, Joint Res Ctr Light Manipulat Sci & Photon Integra, Shanghai 200241, Peoples R China

[10] East China Normal Univ, Shandong Normal Univ, Shanghai 200241, Peoples R China

来源：

OPTICS LETTERS | 2024年 / 49卷 / 20期

基金：

中国国家自然科学基金;

关键词：

Photolithography;

D O I：

10.1364/OL.538158

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

We present a compact dual-arm thin-film lithium niobate (TFLN) electro-optic phase modulator fabricated using the photolithography-assisted chemo-mechanical etching (PLACE) technique. The design of the device doubles the modulation amount compared to single-arm modulators while maintaining the same chip length. Achieving a half wave voltage of approximately 3 V, the device outperforms conventional single-arm phase modulators. Furthermore, the phase modulator exhibits low sensitivity to optical wavelengths in the range of 1510-1600 nm and offers a low insertion loss of 2.8 dB. The capability to generate multiple sideband signals for optical frequency comb applications is also demonstrated, producing 29 sideband signals at input microwave power of 2 W. (c) 2024 Optica Publishing Group. All rights, including for text and data mining (TDM), Artificial Intelligence (AI) training, and similar technologies, are reserved.

引用

页码：5783 / 5786

页数：4

共 31 条

[31] Hybrid Thin-Film Lithium Niobate Micro-Ring Acousto-Optic Modulator with Low Half-Wave-Voltage-Length Product
Wan, Lei
Huang, Jiying
Wen, Meixun
Li, Huan
Zhou, Wenfeng
Yang, Zhiqiang
Chen, Yuping
Liu, Huilong
Zeng, Siqing
Liu, Dong
Yang, Shuixian
Dai, Daoxin
Li, Zhaohui
LASER & PHOTONICS REVIEWS, 2025, 19 (06)

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