Compact low-half-wave-voltage thin film lithium niobate electro-optic phase modulator fabricated by photolithography-assisted chemo-mechanical etching (PLACE)

被引:0
|
作者
Gao, Lang [1 ,2 ,3 ]
Liang, Youting [4 ]
Chen, Jinming [4 ]
Yu, Jianping [4 ]
Qi, Jia [4 ]
Song, Lvbin [4 ]
Liu, Jian [4 ]
Liu, Zhaoxiang [4 ]
Fang, Zhiwei [4 ]
Qi, Hongxin [4 ,5 ]
Cheng, Ya [1 ,2 ,4 ,5 ,6 ,7 ,8 ,9 ,10 ]
机构
[1] Chinese Acad Sci, Shanghai Inst Opt & Fine Mech SIOM, State Key Lab High Field Laser Phys, Shanghai 201800, Peoples R China
[2] Chinese Acad Sci, Shanghai Inst Opt & Fine Mech SIOM, CAS Ctr Excellence Ultraintense Laser Sci, Shanghai 201800, Peoples R China
[3] Univ Chinese Acad Sci, Ctr Mat Sci & Optoelect Engn, Beijing 100049, Peoples R China
[4] East China Normal Univ, Sch Phys & Elect Sci, Extreme Optoelectromech Lab XXL, Shanghai 200241, Peoples R China
[5] East China Normal Univ, State Key Lab Precis Spect, Shanghai 200062, Peoples R China
[6] Shanxi Univ, Collaborat Innovat Ctr Extreme Opt, Taiyuan 030006, Shanxi, Peoples R China
[7] Shandong Normal Univ, Collaborat Innovat Ctr Light Manipulat & Applicat, Jinan 250358, Peoples R China
[8] Hefei Natl Lab, Hefei 230088, Peoples R China
[9] East China Normal Univ, Joint Res Ctr Light Manipulat Sci & Photon Integra, Shanghai 200241, Peoples R China
[10] East China Normal Univ, Shandong Normal Univ, Shanghai 200241, Peoples R China
基金
中国国家自然科学基金;
关键词
Photolithography;
D O I
10.1364/OL.538158
中图分类号
O43 [光学];
学科分类号
070207 ; 0803 ;
摘要
We present a compact dual-arm thin-film lithium niobate (TFLN) electro-optic phase modulator fabricated using the photolithography-assisted chemo-mechanical etching (PLACE) technique. The design of the device doubles the modulation amount compared to single-arm modulators while maintaining the same chip length. Achieving a half wave voltage of approximately 3 V, the device outperforms conventional single-arm phase modulators. Furthermore, the phase modulator exhibits low sensitivity to optical wavelengths in the range of 1510-1600 nm and offers a low insertion loss of 2.8 dB. The capability to generate multiple sideband signals for optical frequency comb applications is also demonstrated, producing 29 sideband signals at input microwave power of 2 W. (c) 2024 Optica Publishing Group. All rights, including for text and data mining (TDM), Artificial Intelligence (AI) training, and similar technologies, are reserved.
引用
收藏
页码:5783 / 5786
页数:4
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