Charge-Based Capacitance Measurements (CBCM) on MOS devices

被引：23
|
作者：
Sell, Bernhard [2 ]
Avellán, Alejandro [3 ]
Krautschneider, Wolfgang H. [1 ,3 ]
机构：
[1] IEEE
[2] Infineon Technologies, Dresden, Germany
[3] Technical University of Hamburg-Harburg, D-21073 Hamburg, Germany
来源：
IEEE Transactions on Device and Materials Reliability | 2002年 / 2卷 / 01期
关键词：
Charge Based Capacitance Measurements (CBCM) - Low level capacitance;
D O I：
10.1109/TDMR.2002.1014667
中图分类号：
学科分类号：
摘要：
引用
收藏
页码：9 / 12
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