共 50 条
- [41] Manganese in 4H-SiC SILICON CARBIDE AND RELATED MATERIALS 2009, PTS 1 AND 2, 2010, 645-648 : 701 - +
- [44] Growth induced stacking fault formation in 4H-SiC SILICON CARBIDE AND RELATED MATERIALS 2006, 2007, 556-557 : 21 - +
- [45] Growth of homoepitaxial films on 4H-SiC(1120) and 8° off-axis 4H-SiC(0001) substrates and their characterization SILICON CARBIDE AND RELATED MATERIALS 2003, PRTS 1 AND 2, 2004, 457-460 : 221 - 224
- [47] Crystal growth of 4H-SiC on 6H-SiC by traveling solvent method SILICON CARBIDE AND RELATED MATERIALS 2010, 2011, 679-680 : 36 - 39
- [49] Epitaxial growth and characterization of GaAs (111) on 4H-SiC JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 2024, 42 (04):
- [50] Control of Void Formation in 4H-SiC Solution Growth SILICON CARBIDE AND RELATED MATERIALS 2011, PTS 1 AND 2, 2012, 717-720 : 57 - +