Development of gate drive circuit for next-generation ultra high-speed switching devices

被引：9
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作者：
Nagaoka University of Technology, 1603-1, Kamitoraioka, Nagaoka 940-2188, Japan [1 ]
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来源：
IEEJ Trans. Ind Appl. | 2009年 / 1卷 / 46-52+6期
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D O I：
10.1541/ieejias.129.46
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页码：46 / 52
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