Preparation of SIMOX SOI material using Si ion implantation amorphization

被引：0
|
作者：
Lu, Zhiheng [1 ]
Li, Xuechun [1 ]
Ma, Furong [1 ]
Liang, Hong [1 ]
Luo, Yan [1 ]
机构：
[1] Dept. of Phys., Beijing Normal Univ., Beijing 100875, China
来源：
Rare Metals | 2002年 / 21卷 / SUPPL.期
关键词：
Amorphization - Annealing - Crystal microstructure - Ion implantation - Silicon on insulator technology;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
An improved method for fabricating SIMOX SOI material, Si ion implantation amorphization process, is reported in this paper. The process can which enhance diffusion of various atoms in the amorphization region during annealing process. Under a lower temperature annealing, it reduces thready dislocations in the top silicon layer and silicon islands and maybe pinholes in the buried oxide layer and then is able to enhance the quality of SIMOX SOI material.
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页码：20 / 22
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