Highly Sensitive Photodetectors Based on WS2 Quantum Dots/GaAs Heterostructures

被引：0
|
作者：
Li, Xianshuai [1 ]
Lin, Fengyuan [1 ]
Hou, Xiaobing [1 ]
Li, Kexue [1 ]
Liao, Lei [2 ]
Hao, Qun [1 ,3 ]
Wei, Zhipeng [1 ]
机构：
[1] State Key Laboratory of High Power Semiconductor Lasers, College of Physics, Changchun University of Science and Technology, Changchun,130022, China
[2] State Key Laboratory for Chemo/Biosensing and Chemometrics, School of Physics and Electronics, Hunan University, Changsha,410082, China
[3] School of Optoelectronics, Beijing Institute of Technology, Beijing,100081, China
来源：
Faguang Xuebao/Chinese Journal of Luminescence | 2024年 / 45卷 / 10期
基金：
中国国家自然科学基金;
关键词：
Gallium alloys - Gallium arsenide - II-VI semiconductors - Laser excitation - Liquid crystals - Nanocrystalline materials - Nanocrystals - Nanowires - Photodetectors - Quantum dot lasers - Quantum optics - Radiometers - Semiconducting gallium arsenide;
D O I：
10.37188/CJL.20240162
中图分类号：
学科分类号：
摘要：
引用
收藏
页码：1699 / 1706
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