Growth of AlInN on (111)GaAs substrates

被引：0
|
作者：
Guo, Qixin [1 ]
Okada, Akira [1 ]
Kidera, Hiroshige [1 ]
Nishio, Mitsuhiro [1 ]
Ogawa, Hiroshi [1 ]
机构：
[1] Dept. of Elec. and Electron. Eng., Faculty of Science and Engineering, Saga University, 1 Honjo-cho, Saga 840-8502, Japan
来源：
Japanese journal of applied physics | 2000年 / 39卷 / 11 B期
关键词：
Argon - Magnetron sputtering - Morphology - Nitrides - Nitrogen - Semiconducting films - Semiconducting gallium arsenide - X ray diffraction analysis;
D O I：
10.1143/jjap.39.l1143
中图分类号：
学科分类号：
摘要：
Ternary AlInN is grown on (111)GaAs substrates by reactive radio-frequency magnetron sputtering using aluminum and indium targets in an ambient of argon and nitrogen. Highly c-axis-oriented films with a wurtzite structure are obtained. It is revealed that the composition of AlInN layers can be controlled by changing the ratio of the sputtered area of the aluminum plate to that of the indium plate.
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