Semi-insulating GaAs photoconductive switch being triggered by 1064nm laser pulse

被引:0
|
作者
Zhang, Xianbin
Li, Qi
Shi, Wei
Zhao, Wei
机构
来源
Guangzi Xuebao/Acta Photonica Sinica | 2002年 / 31卷 / 09期
关键词
D O I
暂无
中图分类号
学科分类号
摘要
引用
收藏
相关论文
共 50 条
  • [31] Experimental investigation of limit space charge accumulation mode operation in a semi-insulating GaAs photoconductive semiconductor switch
    马湘蓉
    施卫
    向梅
    Journal of Semiconductors, 2013, 34 (07) : 106 - 110
  • [32] Experimental investigation of limit space charge accumulation mode operation in a semi-insulating GaAs photoconductive semiconductor switch
    马湘蓉
    施卫
    向梅
    Journal of Semiconductors, 2013, (07) : 106 - 110
  • [33] Experimental investigation of limit space charge accumulation mode operation in a semi-insulating GaAs photoconductive semiconductor switch
    Ma Xiangrong
    Shi Wei
    Xiang Mei
    JOURNAL OF SEMICONDUCTORS, 2013, 34 (07)
  • [34] Two photon absorption in semi-insulating gallium arsenide photoconductive switch irradiated by a picosecond infrared laser
    Lacassie, F
    Kaplan, D
    De Saxce, T
    Pignolet, P
    EUROPEAN PHYSICAL JOURNAL-APPLIED PHYSICS, 2000, 11 (03): : 189 - 195
  • [35] High Current Operation of a Semi-Insulating Gallium Arsenide Photoconductive Semiconductor Switch Triggered by the Light Produced by a Spark Gap
    Ma, Cheng
    Chen, Kaipeng
    Tao, Jiang
    Wang, Luliu
    Shi, Wei
    IEEE TRANSACTIONS ON PLASMA SCIENCE, 2024, 52 (10) : 5041 - 5046
  • [36] Carbon irradiated semi insulating GaAs for photoconductive terahertz pulse detection
    Singh, Abhishek
    Pal, Sanjoy
    Surdi, Harshad
    Prabhu, S. S.
    Mathimalar, S.
    Nanal, Vandana
    Pillay, R. G.
    Doehler, G. H.
    OPTICS EXPRESS, 2015, 23 (05): : 6656 - 6661
  • [37] Electrical Characterizations of 35-kV Semi-Insulating Gallium Arsenide Photoconductive Switch
    Ma, Cheng
    Wu, Meilin
    Wang, Wennan
    Jia, Yaqiong
    Shi, Wei
    PHOTONICS, 2021, 8 (09)
  • [38] IMPROVED CONTACTS TO SEMI-INSULATING GAAS PHOTOCONDUCTIVE SWITCHES USING A GRADED LAYER OF INGAAS
    KUCHTA, D
    WHINNERY, JR
    SMITH, JS
    WOODALL, JM
    PETTIT, D
    APPLIED PHYSICS LETTERS, 1990, 57 (15) : 1534 - 1536
  • [39] Temperature-dependent terahertz output from semi-insulating GaAs photoconductive switches
    Natl Inst of Standards and, Technology, Gaithersburg, United States
    Appl Phys Lett, 18 (2229-2231):
  • [40] Temperature-dependent terahertz output from semi-insulating GaAs photoconductive switches
    Markelz, AG
    Heilweil, EJ
    APPLIED PHYSICS LETTERS, 1998, 72 (18) : 2229 - 2231